ENEARI-072
Sputtering Plant
Other · 2020
About this facility
Experimental facility designed for research and development activities on advanced thin films. The plant can coat tubular substrates and flat panels using a wide range of deposition techniques, including magnetron sputtering, reactive sputtering, co-sputtering, and IBAD (Ion Beam Assisted Deposition), for the production of metallic, ceramic, and CERMET nanocomposite films. The system is equipped with Plasma Emission Monitoring (PEM) to control high-rate reactive sputtering processes.
Sectors and technologies
linear solar receives
Technical specifications
8 parameters| Facility type | Other |
|---|---|
| Year of construction | 2020 |
| Maximum tubular substrate length | 600 mm |
| Tubular substrate outer diameter | 70–100 mm |
| Tubular substrate wall thickness | 2–5 mm |
| Maximum flat panel dimensions | 1000 mm length × 380 mm height |
| Deposition techniques | Magnetron sputtering, reactive sputtering, co-sputtering and IBAD |
| Reactive sputtering process monitoring | Plasma Emission Monitoring (PEM) |
Available services
- Deposits of coatings at high temperature
Contact & links
Salvatore Esposito salvatore.esposito@enea.it 11. SERVICES USING EXTREME TEMPERATURE CONDITIONS IN SOLAR CONCENTRATORS 104 Deposits of coatings at high temperature Y